JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-66 package
・Continuous
collector current-I
C
=-1A
・Power
dissipation -PD=35W @T
C
=25
℃
・Complement
to type 2N3583
APPLICATIONS
・High
speed switching and linear amplifier
・
High-voltage operational amplifiers
・
Switching regulators ,converters
・
Deflection stages and high fidelity amplifers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6420
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-250
-175
-6
-1.0
-5.0
-1.0
35
200
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
5.0
UNIT
℃/W
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
