JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
・High
voltage ratings
・Excellent
safe operating area
APPLICATIONS
・Series
and shunt regulators
・High-fidelity
amplifiers
・Power
switching circuits
・Solenoid
drivers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6477 2N6478
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2N6477
V
CBO
Collector-base voltage
2N6478
2N6477
V
CEO
Collector-emitter voltage
2N6478
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
140
5
2.5
4
1
50
150
-65~150
V
A
A
A
W
℃
℃
Open emitter
160
120
V
CONDITIONS
VALUE
140
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
2.5
UNIT
℃/W
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
