JMnic
Product Specification
Silicon NPN Power Transistors
2N6653
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)CBO
VCEsat-1
VCEsat-2
VBEsat
ICEV
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
300
350
TYP.
MAX
UNIT
V
IC=0.1A ; IB=0
IC=1mA ; IE=0
IC=10A; IB=2A
IC=15A; IB=3A
IC=15A; IB=3A
V
1.5
1.8
1.8
V
V
V
V
CE=350V;VBE(off)=-1.5V
TC=150℃
0.1
2.0
mA
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
50
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=15A ; VCE=5V
IC=0.5A ; VCE=10V
15
10
hFE -2
DC current gain
fT
Transition frequency
15
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
