JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
voltage,high speed
APPLICATIONS
・Switching
regulators
・Inverters
・Solenoid
and relay drivers
・Deflection
circuits
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6674 2N6675
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6674
V
CBO
Collector-base voltage
2N6675
2N6674
V
CEO
Collector-emitter voltage
2N6675
V
EBO
I
C
I
B
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
T
Total Power Dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
175
200
-65~200
℃
℃
Open collector
Open base
400
7
15
5
6
W
V
A
A
Open emitter
650
300
V
CONDITIONS
VALUE
450
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.0
UNIT
℃/W
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
