JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
ob
f
T
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
2SA1006 2SA1006A 2SA1006B
CONDITIONS
I
C
=-0.5A; I
B
=-50mA
I
C
=-0.5A ;I
B
=-50mA
V
CB
=-150V ;I
E
=0
V
EB
=-3V; I
C
=0
I
C
=-5mA ; V
CE
=-5V
I
C
=-150mA ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V,f=1MHz
I
C
=-100mA ; V
CE
=10V
MIN
TYP.
MAX
-1.0
-1.5
-1
-1
UNIT
V
V
μA
μA
30
60
45
80
320
pF
MHz
h
FE-2
Classifications
R
60-120
Q
100-200
P
160-320
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
