Power Transistors
www.jmnic.com
2SA1012
Silicon PNP Transistors
Features
﹒With
TO-220 package
﹒Complementary
to 2SC2562
BCE
Absolute Maximum Ratings Tc=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
T
j
T
stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
-5
25
150
-55~150
RATING
-60
-50
-5
UNIT
V
V
V
A
A
W
TO-220
Electrical Characteristics Tc=25
SYMBOL
I
CBO
I
EBO
I
CEO
V
CBO
V
(BR)ceo
V
EBO
V
CE(sat-1)
V
CE(sat-2)
h
FE-1
h
FE-2
V
BE(sat)1
V
BE(sat)2
C
OB
f
T
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Collector Output Capacitance
Transition frepuency
V
CB
=-10V; I
E
=0;f=1MHz
I
C
=-1A; V
CE
=-4V
70
60
pF
MHz
I
C
=-1A; V
CE
=-1V
I
C
=-3A; V
CE
=-1V
I
C
=-8A; I
B
=-0.15A
70
30
-0.9
-1.2
V
240
I
C
=-8A; I
B
=-0.15A
-0.2
-0.4
V
I
C
=-10mA;I
B
=0
-50
V
CONDITIONS
V
CB
=-50V; I
E
=0
V
EB
=-5V; I
C
=0
MIN
Typ
MAX
-1
-1
UNIT
uA
uA
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
