JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SA1069
V
CEO(SUS)
Collector-emitter
sustaining voltage
2SA1069A
V
CEsat
V
BEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
2SA1069
I
CBO
Collector
cut-off current
2SA1069A
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
DC current gain
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.3A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
I
C
=-3A; I
B
=-0.3A
I
C
=-3A; I
B
=-0.3A
V
CB
=-60V; I
E
=0
I
C
=-3.0A ,I
B
=-0.3A;L=1mH
CONDITIONS
2SA1069 2SA1069A
MIN
-60
TYP.
MAX
UNIT
V
-80
-0.6
-1.5
V
V
-10
μA
-10
40
40
200
μA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A ; V
CC
=-50V
I
B1
=-I
B2
=-0.3A;R
L
=17Ω
0.5
2.5
0.5
μs
μs
μs
h
FE-2
Classifications
M
40-80
L
60-120
K
100-200
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
