JMnic
Product Specification
Silicon PNP Power Transistors
2SA1109
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・High
transition frequency
APPLICATIONS
・For
audio frequency amplifier and high
power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-180
-180
-5
-10
-14
200
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃