JMnic
Product Specification
Silicon PNP Power Transistors
2SA1133 2SA1133A
DESCRIPTION
・With
TO-220 package
・High
breakdown voltage
・High
power dissipation
・Complement
to type 2SC2660/2660A
APPLICATIONS
・For
power amplifier and TV vertical
deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SA1133
V
CEO
Collector-emitter voltage
2SA1133A
V
EBO
I
C
I
CM
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-180
-6
-2.0
-3.0
30
150
-55~150
V
A
A
W
℃
℃
CONDITIONS
Open emitter
VALUE
-200
-150
V
UNIT
V
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
