JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1120
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-35
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-4A; I
B
=-0.1A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-4A ; V
CE
=-2V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-35V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-0.1
mA
h
FE-1
DC current gain
I
C
=-500mA ; V
CE
=-2V
200
h
FE-2
DC current gain
I
C
=-4A ; V
CE
=-2V
70
C
ob
Output capacitance
I
E
=0 ; V
CB
=-10V f=1MHz
62
pF
f
T
Transition frequency
I
C
=-500mA ; V
CE
=-2V
170
MHz
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
