JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-66 package
・Excellent
safe operating area
・High
breadown voltage
APPLICATIONS
・For
general-purpose amplifier ;
and switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2SA1250
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
V
CBO
Collector-base voltage
Open emitter
-200
V
V
CEO
Collector-emitter voltage
Open base
-200
V
V
EBO
Emitter-base voltage
Open collector
-7
V
I
C
Collector current
-8
A
P
D
Total power dissipation
T
C
=25℃
30
W
℃
℃
T
j
T
stg
Junction temperature
150
Storage temperature
-55~150
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
