JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1305
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA , I
B
=0
-30
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-50μA , I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-30V;I
E
=0
-1.0
μA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-1.0
μA
h
FE
DC current gain
I
C
=-0.5A ; V
CE
=-3V
60
320
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-5V
100
MHz
2