JMnic
Product Specification
Silicon PNP Power Transistors
2SA1388
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Trainsition frequency
Collector output capacitance
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-3A ;I
B
=-0.15A
I
C
=-3A ;I
B
=-0.15A
V
CB
=-100V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-3A ; V
CE
=-1V
I
C
=-1A ; V
CE
=-4V
I
E
=0; V
CE
=-10V;f=1MHz
70
30
60
200
MHz
pF
MIN
-80
-0.2
-0.9
-0.4
-1.2
-1
-1
240
TYP.
MAX
UNIT
V
V
V
μA
μA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=-I
B2
=-0.15A
V
CC
=30V;R
L
=10Ω
0.2
1.0
0.1
μs
μs
μs
h
FE-1
Classifications
O
70-140
Y
120-240
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
