JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SA1804
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; I
B
=0
-120
V
V
CEsat
V
BE
Collector-emitter saturation voltage
I
C
=-6A;I
B
=-0.6 A
I
C
=-4A ; V
CE
=-5V
-2.0
V
Base-emitter voltage
-1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-120V； I
E
=0
-5
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-5
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-5V
55
160
h
FE-2
DC current gain
I
C
=-4A ; V
CE
=-5V
35
f
T
C
OB
Transition frequency
I
C
=-1A ; V
CE
=-5V
I
E
=0; V
CB
=10V;f=1MHz
30
MHz
Output capacitance
420
pF
h
FE
classifications
R
55-110
O
80-160
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
