JMnic
Product Specification
Silicon PNP Power Transistors
2SA636 2SA636A
DESCRIPTION
・With
TO-202 package
・Complement
to type 2SC1098/1098A
・High
breakdown voltage
・High
transition frequency
APPLICATIONS
・For
audio frequency power amplifier and
low speed switching applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SA636
V
CEO
Collector-emitter voltage
2SA636A
V
EBO
I
C
I
CM
I
B
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25℃
P
T
Total power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
1.2
150
-55~150
℃
℃
Open collector
Open base
-60
-5
-3
-5
-0.6
10
W
V
A
A
A
CONDITIONS
Open emitter
VALUE
-70
-45
V
UNIT
V
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
