Power Transistors
www.jmnic.com
2SA634
Silicon PNP Transistors
BCE
Features
﹒With
TO-220 package
Absolute Maximum Ratings Tc=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
T
j
T
stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
3.0
10
150
-55~+150
RATING
40
40
5.0
UNIT
V
V
V
A
A
W
TO-220
Electrical Characteristics Tc=25
SYMBOL
I
CBO
I
EBO
I
CEO
V
CBO
V
CEO(SUS)
V
EBO
V
CE(sat-1)
V
CE(sat-2)
h
FE-1
h
FE-2
h
FE-3
V
BE(sat)1
V
BE(sat)1
f
T
C
ob
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter stauration voltages
Base-emitter stauration voltages
Transition frepuency
Output Capacitance
I
C
=3A; I
B
=0.3A
1.5
V
I
C
=1A; V
CE
=5V
40
I
C
=1mA; I
B
=0
I
E
=1mA; Ic=0
I
C
=3A; I
B
=0.3A
40
5
1.0
V
V
CONDITIONS
V
CB
=40V; I
E
=0
V
EB
=5.0V; I
C
=0
V
CE
=40V; I
B
=0
MIN
TYPE
MAX
200
200
0.5
UNIT
uA
uA
mA
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
