JMnic
Product Specification
Silicon PNP Power Transistors
2SA671
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC1061
・Low
collector saturation voltage
Note:type 2SA670 with short pin
APPLICATIONS
・Designed
for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-50
-50
-4
-3
-6
-0.5
25
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
MAX
5.0
UNIT
℃/W
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
