JMnic
Product Specification
Silicon PNP Power Transistors
2SA814 2SA815
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC1624/1625
・High
breakdown voltage
APPLICATIONS
・Medium
power amplifier applications
・Driver
stage amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SA814
V
CBO
Collector-base voltage
2SA815
2SA814
V
CEO
Collector-emitter voltage
2SA815
V
EBO
I
C
I
E
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-100
-5
-1
1
15
150
-55~150
V
A
A
W
℃
℃
Open emitter
-100
-120
V
CONDITIONS
VALUE
-120
V
UNIT
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
