JMnic
Product Specification
Silicon PNP Power Transistors
2SA886
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SC1847
・Low
collector-emitter saturation voltage
APPLICATIONS
・For
low-frequency power amplification
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute Maximun Ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-50
-40
-5
-1.5
-3.0
1.2*
1
P
C
Collector power dissipation
T
C
=25℃
5*
T
j
T
stg
Junction temperature
Storage temperature
2
UNIT
V
V
V
A
A
W
150
-55~150
℃
℃
Note) *1: Without heat sink
*2: With a 100
×
100
×
2 mm A1 heat sink
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
