JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-2mA;I
B
=0
I
C
=-10μA ;I
E
=0
I
C
=-0.5A ;I
B
=-50mA
V
CB
=-20V; I
E
=0
V
CE
=-20V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-0.5A ; V
CE
=-10V
I
C
=-1A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=50mA ; V
CB
=-10V,f=200MHz
85
50
20
200
MIN
-35
-45
2SA885
TYP.
MAX
UNIT
V
V
-0.5
-0.1
-100
-10
340
V
μA
μA
μA
30
pF
MHz
h
FE-1
Classifications
Q
85-170
R
120-240
S
170-340
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
