JMnic
Product Specification
Silicon PNP Power Transistors
2SA957 2SA958
DESCRIPTION
・With
TO-220 package
・High
breakdown voltage
・High
power dissipation
APPLICATIONS
・For
general purpose applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SA957
V
CBO
Collector-base voltage
2SA958
2SA957
V
CEO
Collector-emitter voltage
2SA958
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-200
-6
-2.0
-1.0
30
150
-55~150
V
A
A
W
℃
℃
Open emitter
-200
-150
V
CONDITIONS
VALUE
-150
V
UNIT