JMnic
Product Specification
Silicon PNP Power Transistors
2SB1016
DESCRIPTION
・With
TO-220Fa package
・High
breakdown voltage
・Low
collector saturation voltage
・Complement
to type 2SD1407
APPLICATIONS
・Power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-5
-5
-0.5
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃