JMnic
Product Specification
Silicon PNP Power Transistors
2SB1018
DESCRIPTION
・With
TO-220F package
・High
collector current
・Low
collector saturation voltage
・Complement
to type 2SD1411
APPLICATIONS
・Power
amplifier applications
・High
current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-80
-5
-7
-1
30
W
UNIT
V
V
V
A
A