JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-1A ;I
B
=-1mA
I
C
=-1A ;I
B
=-1mA
V
CB
=-80V; I
E
=0
V
EB
=-8V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
E
=0; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-2V
2000
30
50
MIN
-80
TYP.
2SB1034
MAX
UNIT
V
-1.5
-2.0
-10
-4
V
V
μA
mA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
R
L
=30Ω
I
B1
=I
B2
=1mA
V
CC
=-30V
0.4
2.0
0.4
μs
μs
μs
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
