JMnic
Product Specification
Silicon PNP Power Transistors
2SB1087
DESCRIPTION
・With
TO-220C package
・High
DC current gain
・DARLINGTON
APPLICATIONS
・For
low frequency power amplifier and low
speed power switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-100
-5
-5
1.5
W
UNIT
V
V
V
A
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
