JMnic
Product Specification
Silicon PNP Power Transistors
2SB1015
DESCRIPTION
・With
TO-220Fa package
・Collector
power dissipation
:P
C
=25W@T
C
=25
℃
・Low
collector saturation voltage
・Complement
to type 2SD1406
APPLICATIONS
・For
audio frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-7
-3
-0.5
2.0
W
UNIT
V
V
V
A
A