JMnic
Product Specification
Silicon PNP Power Transistors
2SB1105
DESCRIPTION
・With
TO-220C package
・DARLINGTON
・High
DC durrent gain
・Complement
to type 2SD1605
APPLICATIONS
・Designed
for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-7
-3
30
150
-55~150
UNIT
V
V
V
A
W
℃
℃