JMnic
Product Specification
Silicon PNP Power Transistors
2SB1155
DESCRIPTION
・With
TO-3PFa package
・Complement
to type 2SD1706
・Low
collector saturation voltage
・Satisfactory
linearity of h
FE
APPLICATIONS
・For
power switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-130
-80
-7
-15
-25
80
W
UNIT
V
V
V
A
A