JMnic
Product Specification
Silicon PNP Power Transistors
2SB1162
DESCRIPTION
・With
TO-3PL package
・Complement
to type 2SD1717
・Excellent
linearity of h
FE
・Wide
area of safe operation (ASO)
・High
transition frequency f
T
APPLICATIONS
・For
high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
-12
-20
3.5
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
120
150
-55~150
℃
℃
W
UNIT
V
V
V
A
A