JMnic
Product Specification
Silicon PNP Power Transistors
2SB1186
DESCRIPTION
・With
TO-220Fa package
・Low
collector saturation votlage
・Complement
to type 2SD1763
・High
breakdown voltage
APPLICATIONS
・For
use in low frequency power
amplifer applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-5
-1.5
-3.0
2.0
W
UNIT
V
V
V
A
A