JMnic
Product Specification
Silicon PNP Darlington Power Transistors
2SB1255
DESCRIPTION
・With
TO-3PFa package
・Optimum
for 90W Hi-Fi output
・High
foward current transfer ratio h
FE
・Low
collector-emitter saturation voltage
・Complement
to type 2SD1895
APPLICATIONS
・Power
amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
3
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-140
-8
-15
-12
100
W
UNIT
V
V
V
A
A
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
