JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220Fa package
・Satisfactory
linearity of h
FE
・Low
collector to emitter saturation voltage
・Complement
to type 2SD1985/1985A
APPLICATIONS
・For
power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
2SB1393 2SB1393A
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB1393
V
CBO
Collector-base voltage
2SB1393A
2SB1393
V
CEO
Collector-emitter voltage
2SB1393A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
℃
℃
Open collector
Open base
-80
-5
-3
-5
25
W
V
A
A
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
