JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB1604
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB1604A
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
I
C
=-10A ;I
B
=-0.33A
I
C
=-10A ;I
B
=-0.33A
V
CB
=-40V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.5A ; V
CE
=-10V
I
C
=-10mA ;I
B
=0
CONDITIONS
2SB1604 2SB1604A
MIN
-20
TYP.
MAX
UNIT
V
-40
-0.6
-1.5
-50
-50
45
90
400
100
260
pF
MHz
V
V
μA
μA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A; I
B1
=-I
B2
=-0.1A
0.1
0.5
0.1
μs
μs
μs
h
FE-2
Classifications
Q
90-180
P
130-260
2
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
