JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB554
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
-180
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-10A; I
B
=-1A
-3.0
V
V
BE
Base-emitter on voltage
I
C
=-2A ; V
CE
=-5V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-90V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-0.1
mA
h
FE
DC current gain
I
C
=-2A ; V
CE
=-5V
40
140
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1.0MHz
450
pF
f
T
Transition frequency
I
C
=-2A ; V
CE
=-5V
6
MHz
2