JMnic
Product Specification
Silicon PNP Power Transistors
2SB555 2SB556
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SD425/426
・High
power dissipation
APPLICATIONS
・Power
amplifier applications
・Recommended
for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2SB555
V
CBO
Collector-base voltage
2SB556
2SB555
V
CEO
Collector-emitter voltage
2SB556
V
EBO
I
C
I
E
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-120
-5
-12
12
100
150
-65~150
V
A
A
W
℃
℃
Open emitter
-120
-140
V
CONDITIONS
VALUE
-140
V
UNIT
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
