JMnic
Product Specification
Silicon PNP Power Transistors
2SB595
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD525
・High
breakdown voltage :V
CEO
=-100V
・Low
collector saturation volage
: V
CE(sat)
=-2.0V(Max)
APPLICATIONS
・Power
amplifier applications
・Recommend
for 30W high fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Base current
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-5
-5
-5
-4
40
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃