JMnic
Product Specification
Silicon PNP Power Transistors
2SB649 2SB649A
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SD669/669A
・High
breakdown voltage V
CEO:
-120/-160V
・High
current -1.5A
・Low
saturation voltage,excellent h
FE
linearity
APPLICATIONS
・For
low-frequency power
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB649
V
CBO
Collector-base voltage
2SB649A
2SB649
V
CEO
Collector-emitter voltage
2SB649A
V
EBO
I
C
I
CM
P
D
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
Total power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
℃
℃
Open collector
Open base
-160
-5
-1.5
-3
1
W
V
A
A
Open emitter
-180
-120
V
CONDITIONS
VALUE
-180
V
UNIT
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
