Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SB656
DESCRIPTION
・With
TO-3 package
・High
power dissipation
APPLICATIONS
・For
use in power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
-12
-4
125
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃