JMnic
Product Specification
Silicon PNP Power Transistors
2SB697 2SB697K
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SD733/733K
・High
power dissipation
APPLICATIONS
・Power
amplifier applications
・Recommended
for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
固电
导�½�
半
SEM
GE
AN
2SB697
2SB697K
2SB697
2SB697K
V
CBO
V
CEO
CH
IN
Collector-base voltage
Open emitter
ND
ICO
CONDITIONS
OR
UCT
VALUE
-160
-180
-140
UNIT
V
Collector-emitter voltage
Open base
-160
Open collector
-6
-12
-20
T
C
=25℃
100
150
-40~150
V
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
V
A
A
W
℃
℃
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
