Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2SB754
DESCRIPTION
・With
TO-3P(I) package
・Complement
to type 2SD844
・High
collector current :I
C
=-7A
・Low
collector saturation voltage
・High
power dissipation
APPLICATIONS
・High
current switching applications
・Power
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
E
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
60
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-50
-50
-5
-7
7
2.5
W
UNIT
V
V
V
A
A
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
