JMnic
Product Specification
Silicon PNP Power Transistors
2SB755
DESCRIPTION
・With
MT-200 package
・Complement
to type 2SD845
・High
transition frequency
・High
breakdown voltage :V
CEO
=-150V(min)
APPLICATIONS
・For
power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collectorl power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-150
-5
-12
-1.2
120
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃