JMnic
Product Specification
Silicon PNP Power Transistors
2SB757
DESCRIPTION
・With
TO-3PN package
・High
collector current
・Wide
area of safe operation
・Complement
to type 2SD847
APPLICATIONS
・Audio
amplifications
・Serie
regulators
・General
purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-40
-40
-5
-15
-5
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.56
UNIT
℃/W
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
