JMnic
Product Specification
Silicon PNP Power Transistors
·
2SB827
DESCRIPTION
・With
TO-3PN package
・Complement
to type 2SD1063
・Wide
area of safe operation
・Low
collector-emitter saturation voltage :
V
CE(sat)
=(–)0.4V max.
APPLICATIONS
・Universal
high current switching as solenoid
driving,high speed inverter and converter.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-50
-6
-7
-14
60
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
