JMnic
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD1133/1134
APPLICATIONS
・Low
frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SB857
V
CEO
Collector-emitter voltage
2SB858
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-60
-5
-4
-8
40
150
-45~150
V
A
A
W
℃
℃
CONDITIONS
Open emitter
VALUE
-70
-50
V
UNIT
V
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
