JMnic
Product Specification
Silicon PNP Power Transistors
2SB860
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD1137
APPLICATIONS
・Low
frequency power amplifier TV
vertical deflection output applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
・
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
40
150
-45~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-4
-4
-5
1.8
W
UNIT
V
V
V
A
A
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
