JMnic
Product Specification
Silicon PNP Power Transistors
2SB919
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SD1235
・Low
collector saturation voltage
・Large
current capacity
APPLICATIONS
・Large
current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25℃
P
C
Collector dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-50~150
℃
℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-60
-30
-6
-8
-15
1.75
W
UNIT
V
V
V
A
A
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
