JMnic
Product Specification
Silicon PNP Power Transistors
2SB941 2SB941A
DESCRIPTION
・With
TO-220Fa package
・Low
collector saturation voltage
・Complementary
to type
2SD1266/1266A
APPLICATIONS
・For
low-frequency power amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB941
V
CBO
Collector-base voltage
2SB941A
2SB941
V
CEO
Collector-emitter voltage
2SB941A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
35
150
-55~150
℃
℃
Open collector
Open base
-80
-5
-3
-5
2
W
V
A
A
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
