JMnic
Product Specification
Silicon PNP Power Transistors
2SB966
DESCRIPTION
・With
TO-3PFa package
・Complement
to type 2SD1289
APPLICATIONS
・For
use in low frequency and
power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-5
-8
-12
80
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃