Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1079 2SC1080
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SA679/680
・High
power dissipation
APPLICATIONS
・For
audio power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2SC1079
V
CBO
Collector-base voltage
2SC1080
2SC1079
V
CEO
Collector-emitter voltage
2SC1080
V
EBO
I
C
I
E
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
100
5
12
-12
100
150
-65~150
V
A
A
W
℃
℃
Open emitter
100
120
V
CONDITIONS
VALUE
120
V
UNIT
JMNIC [ QUANZHOU JINMEI ELECTRONIC CO.,LTD. ]
