Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SC1096
DESCRIPTION
・With
TO-202 package
・Low
breakdown voltage
・High
current
・High
f
T
APPLICATIONS
・For
audio frequency power amplifier
and low speed switching applications
・Suitable
for output stages of 3 to 5 watts
car radio sets and car stereo
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25℃
Collector power dissipation
T
C
=25℃
Junction temperature
Storage temperature
10
150
-55~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
40
30
5
3
6
0.6
1.2
W
UNIT
V
V
V
A
A
A
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